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Izophase TM 200

High frequency plasma-enhanced chemical vapour deposition of conducting and dielectric materials (SiO2, Si3N4, Si, SiC)

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Plasma-enhanced chemical vapour deposition of dielectric doped and non-doped silicon dioxide (SiO2) and silicon nitrate (Si3N4) at low pressure

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Low temperature chemical vapour deposition, including CVD of doped and non-doped silicon dioxide layers with the use of concentrated reagents at low pressure (fore-vacuum)

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Magnetron sputtering deposition of multilayer or multi-component metal and dielectric coatings

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MVU TM Izophase CVD

Deposition of dielectric layers (SiO2, Si3N4) from the gas phase with a plasma activation in RF discharge with RF diode sputtering system.

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MVU TM Izophase CVD ICP

Deposition of dielectric layers (SiO2, Si3N4) from the gas phase with a plasma activation in RF discharge with inductively coupled plasma ICP source

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Deposition of metal films (AI, Ni, Fe, W, etc.) and dielectric (SiO2, Si3N4, etc.) by magnetron sputtering.

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Metal film deposition by vacuum chemical vapor deposition

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MESH-60 provides quite new coatings, which result from uniting in one vacuum cycle a variety of technological processes, including ionic cleaning and activation of items’ surfaces, magnetron high-speed deposition of different materials with assisting, deposition of multiplayer and nano- coatings

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MESH plus

124489, Russia, Moscow, Zelenograd, Eastern-communal zone, proezd 4921, str.1

info@meshplus.ru

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