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Voshod-KRLZ

248009, Russia, Kaluga, Grabtsevskoe shosse, 43

krlz@made-in-zelenograd.com

CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs IN THE RED RANGE OF WAVELENGTHS
TypeMaterial structure / substrate *λp, 5nmCandlepower,mcd, at 20mReverse voltageVr min, , at Ir = 10µResponse time, ns
mintype?r?f
ESAGA 49AlGaAs(SH) / p-GaAs650-6655786050
ESAGA 125AlGaAs(DH) / n-GaAs650-66591284030
ESAGA 125SAlGaAs(DH) / n-GaAs650-6652,5484030
ESAGA 129AlGaAs(DH) / n-GaAlAs650-665182585035
ESAGA 131AlGaAs(DH) / p-GaAs650-665121584030
ESAGA 140AlGaAs(DH) / p-GaAlAs650-665203055035

*Notes: SH - heterostructure, DH - double heterostructure, n upper side of n-type, p upper side of p-type

CHARACTERISTICS OF CRYSTAL WAFERS AlGaAs FOR LEDs IN THE INFRARED RANGE OF WAVELENGTHS
TypeMaterial structure / substrate *λp, 5nmCandlepower, mcd, at 20mReverse voltage Vr min, , at Ir = 10µResponse time, ns
mintype?r?f
ESAGA 20AlGaAs(DH) / p-GaAs800-8600,81,486050
ESAGA 131LAlGaAs(DH) / p-GaAs680-7900,81,484030
ESAGA 136AlGaAs(DH) / n-GaAlAs850-8803484030
4582520
2382520
ESAGA 140AlGaAs(DH) / p-GaAlAs720-7402,53,584030
ESAGA 140LAlGaAs(DH) / p-GaAlAs800-8703484030
4584030
ESAGA 141AlGaAs(DH) / n-GaAlAs900-9402,53,58300300

*Notes: SH - heterostructure, DH - double heterostructure, n upper side of n-type, p upper side of p-type

Substrates of monocrystalline GaAs

Characteristics of GaAs substrates:

  • production method - method by Chokhralski with liquid encapsulation of the melt
  • dislocation density not less than 5104cm-2
  • carrier concentration 11016 - 31018cm-3
  • dopants Te, Zn
  • diameter 2;3 in.
  • crystallographic direction (100),(111)
  • thickness 350 650
  • surface treatment one- or two-sided polishing

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