High frequency plasma-enhanced chemical vapour deposition of conducting and dielectric materials (SiO2, Si3N4, Si, SiC) in vacuum reactor particularly for the purpose of diamond-like films formation and carbon nanotubes growing.

Technical characterictics:

  • plasma-enhanced chemical vapour deposition source
  • sluice chamber for loading/unloading of single substrates or a substrate holder below 200 mm (200×200 mm)
  • desk with a heater (to 800°C) and substrate bias source
  • oil-free fore-vacuum system based on chemically stable turbo molecular and fore-vacuum pumps
  • microprocessor-based process control system
  • clean-room compatibility
  • separate machines can be assembled into a cluster complex by connecting machinesĺ sluice chambers or handling module platforms

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