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MVU TM Izophase CVD ICP compact vacuum plasma-enhanced chemical vapor deposition machine with inductively coupled plasma source.

Deposition of dielectric layers (SiO2, Si3N4) from the gas phase with a plasma activation in RF discharge.

Possible to implement selective plasma-enhanced chemical etching and reactive-ion anisotropic etching with cooled substrate holder.

Features:

  • individual processing of substrates up to &ospash;100mm (100×100 mm)
  • reactor with ICP source
  • vacuum pump ultimate pressure 0.0001 Pa
  • maintaining the stability of the RF discharge in the range of operating pressures of 0.5…5 Pa
  • changing the RF bias on the RF substrate holder electrode in the range from 0 to 1000 V
  • regulation and automatic control of the RF power level in the range of 30…200 W
  • heating the substrate holder up to 400°C
  • automated control from the PC
  • power consumption of less than 3 kW
  • space occupied by one unit is about 1,5m²

MVU TM Izophase CVD ICP reactor scheme

MVU TM Izophase CVD ICP compact vacuum plasma-enhanced chemical vapor deposition reactor scheme

  • vacuum chamber with ICP source;
  • heating substrate holder
  • two RF generators 13.56 MHz, 300 W
  • vacuum pump ultimate pressure 0.0001 Pa
  • generator to the power load matching controller
  • mechanical pump vacuum system with "E2M40 Pfeiffer" vacuum gauge
  • gas system includes gas flow regulators RWG-10, manual stop valves, pressure regulators, pressure gauges, solenoid valves
  • water cooling system
  • microprocessor controlled system

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