MVU TM RIT ľ compact vacuum reactive-ion etching RIE machine.

Etching of thin dielectric (SiO2, Si3N4) and metal layers (Mo, Cr, etc.), semiconductor materials (GaAs, Si, etc.) by plasma-reactive ion etching.


  • individual processing of substrates up to ø150mm (100×100 mm)
  • vacuum pump ultimate pressure 0.0005 Pa
  • maintaining the stability of the RF discharge in the range of operating pressures of 2…30 Pa
  • changing the RF bias on the RF substrate holder electrode in the range from 0 to 1000 V
  • regulation and automatic control of the RF power level in the range of 30…200 W
  • water-cooled substrate holder
  • automated control from the PC
  • power consumption of less than 3 kW
  • space occupied by one unit is about 1,5m²

MVU TM RIT reactor scheme

MVU TM RIT vacuum reactive-ion etching reactor scheme

  • vacuum chamber
  • cooling substrate holder
  • RF generator of 13.56 MHz, 300 W
  • generator to the power load matching controller
  • mechanical pump vacuum system with "E2M40 Pfeiffer" vacuum gauge
  • gas system includes gas flow regulators RWG-10, manual stop valves, pressure regulators, pressure gauges, solenoid valves
  • water cooling system
  • microprocessor controlled system

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