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Fields of application of the NTF NANOFAB 100 cover almost all areas of the nanotechnology research and development that are linked with solid-body nano-materials, nano-structures and nano-devices. The spectrum of NANOFAB 100s capabilities expands from fundamental research to the development of single technology methods and to modeling nano-electronics devices. In addition, the employed scheme of arrangement, the control system and the well-developed transport system of the NANOFAB 100 make it possible to use the NTF for low quantity production of nano-structures and nano-devices. The coordinate-linked system of substrate positioning makes it possible to create complex multicomponent 3D nano-devices by using sequential nanotechnology operations with the nanometer resolution. The NTF NANOFAB 100s area of applications has especial significance for the development of modern silicon electronics, which has already become part of practical nano-electronics.

Structure

Broad capabilities of the NANOFAB 100 result from the thoroughly elaborated cluster arrangement scheme a special ultra-high vacuum transportation robot provides all interconnections between modules united into a cluster. This minimizes the travel time required to transfer samples in between operations and, therefore, provides better preservation of their surfaces, which is crucial in nanotechnologies. The intermediate modules, which provide the process of translation of substrates, are equipped with rotation devices and they allow performing complex technology cycles, including batch and local processes. In addition they provide all necessary control, measurement and analytical procedures.

The intermodular transport system and intermediate modules, which are used to store substrates in between operations, allow a single NTF NANOFAB 100 to realize several nanotechnology cycles on different substrates simultaneously. Therefore several research groups can use the same NTF at once. Apart from modules, the NANOFAB 100 comprises separate auxiliary, control, measurement, and analytical devices. Those devices can be used with modules of NANOFAB 100 via special ports, available in the modules in a sufficient number. Modules of the NANOFAB 100 platform can operate both as an integral part of a NTF and autonomously. In some cases it is possible to run them using auxiliary loading devices or loading modules. NANOFAB 100 is an open and permanently developing platform several modules based on newest techniques are being under development.

Uniqueness

The components of the platform, its transport and control systems and its flexibility to assemble various nanotechnology facilities make the NANOFAB 100 platform to be unique with no analogous systems in the world.

Ultra-high vacuum cluster for local techniques

This cluster contains:

  • UHV SPM module - UHV scanning probe microscopy module. UHV SPM module is an analytical instrument designed for the wafer research and quality control (wafers with a diameter up to 100 mm). It can perform more than 40 measurement techniques in ultraclean UHV conditions (down to 10-10 mb). Fully automated probe exchange system provides easy probe exchange without breaking ultra-high vacuum. The precision XY-manipulator makes it possible to investigate fabricated nano-objects.
  • UHV FIB module - FIB nanolocal treatment UHV module. UHV FIB module is a complete instrument designed for modification and analysis of nanostructures up to 100 nm by means of ion beam cutting and milling. Milling cutter with a diameter 10-20 m is ideal for NEMS and MEMS prototyping. Module is optimally isolated by active anti-vibration system counteracted mechanical vibrations in a wide range of frequencies. Module can be extended with SEM column providing high resolution imaging and SIMS system.
  • FIB Imp module - UHV FIB implantation module. Automated FIB Imp module is an efficient tool for implantation the ions into materials and easy analysis. The central element is a focused ion beam column with magnetic separator. It is possible to focus the ions over a dedicated area by using as an ion source one of the alloys (AuSi, AuGe, AuGeSi, CoNd, CoGe, ErNi, ErFeNiCr, NiB, GaIn, BPt, AuBeSi, AuFeGe, AuGeMn). Wien filter for selection the ion source is a part of ion beam column. Module is optimally isolated by active anti-vibration system counteracted mechanical vibrations in a wide range of frequencies. Module can be extended with SEM column providing high resolution imaging and SIMS system.
  • RDC module - UHV radial distribution module
  • LS module - Module for sample loading and storage
  • RT module - UHV module for sample revolution and transportation

This cluster allows using focused ion beams in the conditions of high vacuum, which provides the highest level of clearness of the structures fabricated.

The presence of a UHV SPM provides control of the structures fabricated with sub-nanometer resolution.

Cluster overall dimensions - 300470 cm.

High vacuum cluster for local and batch techniques

This cluster contains:

  • FIB GIS module - HV FIB GIS module
  • SPM GIS module - HV SPM GIS module
  • PLD module - pulsed laser deposition module
  • RDC module - UHV radial distribution module
  • LS module - Module for sample loading and storage
  • RT module - UHV module for sample revolution and transportation

This cluster allows performing induced local processes of gas deposition/etching. The use of focused ion beams and tip probes secures localization of the processes.

The pulsed laser deposition module provides various substrates with the highest level of clearness and it allows operating focused ion beams in ultra-high vacuum, which secures the highest level of clearness of the structures fabricated. The presence of a GIS SPM provides control of the structures fabricated with sub-nanometer resolution.

Cluster overall dimensions - 300470 cm.

Plasma processing cluster

This cluster contains:

  • PE module - plasma etching module
  • PC module - plasma cleaning module
  • RDC module - UHV radial distribution module
  • LS module - Module for sample loading and storage
  • RT module - UHV module for sample revolution and transportation

The plasma techniques cluster is used to perform cleaning, etching and deposition procedures. In particular it provides:

  • express sub-micron etching of dielectrics (SiO2, Si3N4)
  • etching of metals, including ion etching of gold, copper and other metals that produce no volatile composition
  • etching of monocrystal silicon in various types of processes
  • etching of arsenides and nitrides of gallium
  • etching of polyimide, removal of resist
  • deposition of dielectrics with high quality and uniformity (SiO2, Si3N4)
  • treatment in hydrogen plasma and atomic hydrogen

Cluster overall dimensions - 320320 cm.

Molecular beam epitaxy cluster

This cluster contains:

  • MBE GaAs module - MBE of AIIIBV compounds module. The MBE GaAs module is intended for epitaxial growth of classic compositions of AIIIBV type on substrates of up to 100 mm diameter. Design of this module allows using classic effusion cells, loaded with solid material and gaseous source of ammonia, as sources of growth components. During transportation into the chamber and in the process of growing, the substrate (and its holder) is fixed horizontally with its growth surface oriented face down. This minimizes chances of uncontrolled contamination. The cylindrical ultra-high vacuum chamber provides the vertical growth geometry with the horizontal orientation of the substrate.
  • MBE GaN module - MBE of group III nitrides module. The molecular beam epitaxy module is intended for epitaxial growth of semiconductive heterostructures of III-group nitrides and it is configured to grow materials of InAlGaN/GaN system using ammonia as a source of active nitrogen. During transportation into the chamber and in the process of growing, the substrate is fixed in its holder horizontally with its growth surface oriented face down. This minimizes chances of uncontrolled contamination. Extended-area cryo-panels are used for efficient evacuation of volatile components of group V, and their design minimizes the probability of getting the growth products from the cryo-panels into the sources of material. The pumping system incorporates a high-capacity turbo-molecular corrosion-free pump and it extends the technology capabilities to grow heterostructures within more concentrated flows of ammonia in conjunction with extremely high (>1000C) temperature of the substrate. A notable feature of the design is the possibility to adjust the growth geometry by means of a large vertical travel range (76 mm) of the growth manipulator. This feature makes it possible to combine two operational growth positions within the same chamber: (i) research, to perform growth without rotating the substrate holder using fast electrons diffraction and laser interference (with measures taken to provide sufficient homogeneousness of the epitaxial film), and (ii) production, to perform growth with rotation so as to provide high homogeneousness of the film on large-sized substrates.
  • RDC module - UHV radial distribution module
  • LS module - Module for sample loading and storage
  • RT module - UHV module for sample revolution and transportation

The molecular beam epitaxy cluster is intended for epitaxial growth of classic compositions of AIIIBV type and semiconductive heterostructures of III-group nitrides on substrates of up to 100 mm diameter.

It is also possible to grow materials of InAlGaN/GaN using ammonia as a source of active nitrogen.

Cluster Overall dimensions - 360280 cm.

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