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Plasma chemical and reactive-ion etching of conducting and dielectric materials, particularly for the purpose of nanostructures and microelectronic mechanical systems (MEMS) formation.

High frequency plasma-enhanced chemical vapour deposition of conducting and dielectric materials (SiO2, Si3N4, Si, SiC) in vacuum reactor particularly for the purpose of diamond-like films formation and carbon nanotubes growing.

Technical characteristics:

  • high quality inductively coupled plasma (ICP) source
  • sluice chamber for loading/unloading of single substrates or a substrate holder below ø200 mm (200×200 mm)
  • oil-free chemically stable fore-vacuum system based on turbo molecular and fore-vacuum pumps
  • desktop helium-based cooling of substrates
  • microprocessor-based process control system
  • clean-room compatibility
  • separate machines can be assembled into a cluster complex by connecting machines sluice chambers or handling module platforms
  • desktop helium-based substrate cooling system with substrate bias source
  • surface irregularity after etching ±2 %

Speed of anisotropic etching:

  • silicon (1-3) micrometers per minute
  • silicon dioxide, quartz, pyrex glass - (0.5-1) micrometers per minute
  • aspect ration - 1/10 1/30

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