JSC Epiel

1st Zapadny proezd 12, bld.2, 124460, Zelenograd, Moscow, Russia


We have developed and applied in mass production technological processes to produce silicon Epitaxial wafers for different applications.


  • Integrated circuits (IC)
  • Low-signal diodes and transistors
  • Power diodes and transistors
  • Schottky diodes
  • Ultra-fast diodes
  • IGBT
  • DMOS

Our engineering capabilities allow us to provide R&D in order to develop customized processes for our customers and supply non-standard epi products.

Epiel manufactures finished Si Epitaxy wafers and also provides Silicon Epi Deposition services on customers substrates.

For Integrated Circuit manufacturers we provide Silicon Epitaxy on substartes with buried layers.

Parameters range for Silicon Epi Wafers

Wafer diameter76 mm, 100 mm, 150 mm
-+ 200 mm (starting 2011)
Orientation(111), (100)
Substrate dopantAntimony, Boron, Arsenic
EPI-layer thickness, m3,0 150
EPI-layer dopantPhosphorous, Boron, Arsenic
EPI-layer resistivity, Ohm.cm
n-type0,01 500
p-type0,01 100
Single-layer structure types
n-n+, p-n+, p-p+, n-p+
Double-layer structure typesn1-n2-n+, n1-n2-p+, n-p-n+, p-n-p
Buried Layer EpitaxyUp to 3 buried layers

In 2011 Epiel plans to introduce 200 mm Silicon Epitaxial wafers in the product range.

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