MVU TM Izophase - compact vacuum plasma-enhanced chemical vapor deposition machine with RF diode sputtering system.

Deposition of dielectric layers (SiO2, Si3N4) from the gas phase with a plasma activation in RF discharge. Possible to implement the process of plasma selective etching in a cooled substrate holder.


  • individual processing of substrates up to ø150mm (100×100 mm);
  • vacuum pump ultimate pressure 0.5 Pa;
  • maintaining the stability of the RF discharge in the range of operating pressures of 2…30 Pa;
  • regulation and automatic control of the RF power level in the range of 30…200 W;
  • heating the substrate holder up to 350 °C;
  • automated control from the PC;
  • power consumption of less than 3 kW;
  • space occupied by one unit is about 1,5m²

MVU TM Izophase CVD reactor scheme

MVU TM Izophase vacuum plasma-enhanced chemical vapor deposition reactor scheme

  • vacuum chamber
  • cooling substrate holder
  • RF generator of 13.56 MHz, 300 W
  • generator to the power load matching controller
  • mechanical pump vacuum system with "E2M40 Pfeiffer" vacuum gauge
  • gas system includes gas flow regulators RWG-10, manual stop valves, pressure regulators, pressure gauges, solenoid valves
  • water cooling system
  • microprocessor controlled system

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